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pd-97417 revc IRAM136-1061A series 10~12a, 600v integrated power hybrid ic for a ppliance motor drive applications with open emitter pins description international rectifier's IRAM136-1061A is a 10~12a, 600v integrated power hybrid ic with open emitter pins for advanced appliance motor drives applications such as energy efficient washing machine and refrigerator compressor drivers. ir's technology offers an extremely compact, high performance ac motor- driver in a single isolated package to simplify design. this advanced hic is a combination of ir's low v ce (on) trench igbt technology and the industry benchmark 3 phase high voltage, high speed driver (3.3v compatible) in a fully isolated thermally enhanced package. a built-in high precision temperature monitor and over-current protection feature, along with the short-circuit rated igbts and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. using a single in line package with full transfer mold structure and cti>600 minimizes pcb space and resolves isolation problems to heatsink. features integrated gate drivers and bootstrap diodes temperature monitor protection shutdown pin low v ce (on) trench igbt technology undervoltage lockout for all channels matched propagation delay for all channels 3.3v schmitt-triggered input logic cross-conduction prevention logic motor power range 0.25~0.75kw / 85~253 vac isolation 2000vrms min and cti> 600 rohs compliant recognized by ul (file number: e252584) absolute maximum ratings v ces / v rrm igbt/ fw diode blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c rms phase current at f pwm =16khz (note 1) 10 i o @ t c =100c rms phase current at f pwm =16khz (note 1) 5 i o @ t c =25c rms phase current at f pwm =6khz (note 1) 12 i o @ t c =100c rms phase current at f pwm =6khz (note 1) 6 i pk maximum peak phase current (note 3) 15 f p maximum pwm carrier frequency 20 khz p d maximum power dissipation per igbt @ t c =25c 29 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diode & ic) maximum operating junction temperature +150 t c operating case temperature range -20 to +100 t stg storage temperature range -40 to +125 t mounting torque range (m3 screw) 0.8 to 1.0 nm note 1: sinusoidal modulation at v + =320v, v cc =15v, t j =150c, mi=0.8, pf=0.6, see figure 4. note 2: t p <100ms, v cc =15v, t c =25c, f pwm =16khz. v a c www.irf.com 1
IRAM136-1061A internal electrical schematic C IRAM136-1061A v+ (13) vru (17) vrv (19) vrw (21) u, vs1 (10) v, vs2 (6) w, vs3 (2) 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 lin1 5 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 lo1 16 lo3 14 lo2 15 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 driver ic vb1 (9) vb2 (5) vb3 (1) hin1 (20) hin2 (22) hin3 (23) lin1 (24) lin2 (25) lin3 (26) itrip (16) flt/en (18) vth (27) vcc (28) vss (29) q1 q4 q2 q3 q5 q6 d1 d4 d2 d3 d5 d6 r1 r4 r2 r3 r5 r6 r9 r8 r7 d9 d8 d7 c1 c2 c3 c4 c5 c6 2 www.irf.com
IRAM136-1061A absolute maximum ratings (continued) symbol parameter min max units conditions i bdf bootstrap diode peak forward current --- 1.0 a t p =10ms, t j =150c, t c =100c p br peak bootstrap resistor peak power (single pulse) --- 15.0 w t p =100s, t c =100c esr series v s1,2,3 high side floating supply offset voltage v b1,2,3 - 20 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, i trip , flt/en -0.3 lower of (v ss +15v) or v cc +0.3v v inverter section electrical characteristics symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =0v, i c =250a v (br)ces / t temperature coeff. of breakdown voltage --- 0.3 --- v/c v in =0v, i c =250a (25c - 150c) --- 1.5 1.7 i c =5a, t j =25c --- 1.7 2.1 i c =5a, t j =150c --- 5 80 v in =0v, v + =600v --- 80 --- v in =0v, v + =600v, t j =150c -- 1.8 2.35 i f =5a --- 1.45 1.8 i f =5a, t j =150c --- 1.65 1.8 i f =1a --- 1.3 --- i f =1a, t j =150c r br bootstrap resistor value --- 22 --- t j =25c r br /r br bootstrap resistor tolerance --- --- 5 % t j =25c c 1,2,3,4 v cc / v bs capacitor value --- 47 --- nf t j =25c c 6 itrip capacitor value --- 1 --- nf t j =25c v fm diode forward voltage drop v i ces zero gate voltage collector current a v bdfm bootstrap diode forward voltage drop v v bias (v cc , v bs1,2,3 )=15v, t j =25 o c, unless otherwise specified. v ce(on) collector-to-emitter saturation voltage v www.irf.com 3
IRAM136-1061A inverter section swit ching characteristics symbol parameter min typ max units conditions e on turn-on switching loss --- 240 400 e off turn-off switching loss --- 65 90 e tot total switching loss --- 305 490 e rec diode reverse recovery energy --- 15 25 t rr diode reverse recovery time --- 115 --- ns e on turn-on switching loss --- 330 --- e off turn-off switching loss --- 105 --- e tot total switching loss --- 435 --- e rec diode reverse recovery energy --- 40 --- t rr diode reverse recovery time --- 150 --- ns q g turn-on igbt gate charge --- 19 29 nc i c =8a, v + =400v, v ge =15v rbsoa reverse bias safe operating area t j =150c, i c =5a, v p =600v v + = 450v, v cc =+15v to 0v see ct3 scsoa short circuit safe operating area 5 --- --- s t j =25c, v + = 400v, v ge =+15v to 0v scsoa short circuit safe operating area 3 --- --- s t j =100c, v + = 400v, v ge =+15v to 0v scsoa short circuit safe operating area 2 --- --- s t j =150c, v + = 360v, v ge =+17.5v to 0v i csc short circuit collector current 11 --- --- a t j =150c, v ce = 50v, v ge =11v full square v bias (v cc , v bs1,2,3 )=15v, t j =25 o c, unless otherwise specified. j i c =5a, v + =400v v cc =15v, l=1.2mh energy losses include "tail" and diode reverse recovery see ct1 j i c =5a, v + =400v v cc =15v, l=1.2mh, t j =150c energy losses include "tail" and diode reverse recovery see ct1 recommended operating conditions driver function symbol definition min typ max units v b1,2,3 high side floating supply voltage v s +12.5 v s +15 v s +17.5 v v s1,2,3 high side floating supply offset voltage note 4 --- 450 v v cc low side and logic fixed supply voltage 13.5 15 16.5 v v itrip i trip input voltage v ss --- v ss +5 v v in logic input voltage lin, hin, flt/en v ss --- v ss +5 v hin high side pwm pulse width 1 --- --- s deadtime external dead time between hin and lin 1 --- --- s note 3: for more details, see ir21364 data sheet the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential (note 3) note 4: logic operational for v s from com-5v to com+600v. logic state held for v s from com-5v to com-v bs . (please refer to dt97-3 for more details) 4 www.irf.com
IRAM136-1061A static electrical characteristics driver function symbol definition min typ max units v in,th+ positive going input threshold for lin, hin, flt/en 2.5 --- --- v v in,th- negative going input threshold for lin, hin, flt/en --- --- 0.8 v v ccuv+, v bsuv+ v cc /v bs supply undervoltage, positive going threshold 10.6 11.1 11.6 v v ccuv-, v bsuv- v cc /v bs supply undervoltage, negat ive going threshold 10.4 10.9 11.4 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 --- v i qbs quiescent v bs supply current --- --- 120 a i qcc quiescent v cc supply current --- --- 2.3 ma i lk offset supply leakage current --- --- 50 a i in+ input bias current v in =3.3v for lin, hin, flt/en --- 100 195 a i in- input bias current v in =0v for lin, hin, flt/en -1 -- --- a i trip+ i trip bias current v t/itrip =3.3v --- 3.3 6 a i trip- i trip bias current v t/itrip =0v -1 --- --- a v(i trip )i trip threshold voltage 0.44 0.49 0.54 v v(i trip, hys) i trip input hysteresis --- 0.07 --- v r on_flt fault low on resistance --- 50 100 v bias (v cc , v bs1,2,3 )=15v, t j =25 o c, unless otherwise specified. the v in and i in parameters are referenced to com and are applicable to all six channels. (note 3) dynamic electrical characteristics symbol parameter min typ max units conditions t on input to output propagation turn- on delay time (see fig.11) --- --- 1.15 s t off input to output propagation turn- off delay time (see fig. 11) --- --- 1.15 s t filin input filter time (hin,lin) --- 310 --- ns v in =0 or v in =5v t filen input filter time (flt/en) 100 200 --- ns v in =0 or v in =5v t en en low to six switch turn-off propagation delay (see fig. 3) --- --- 1.35 s v in =0 or v in =5v, v en =0 t flt i trip to fault propagation delay 400 600 800 ns v in =0 or v in =5v, v itrip =5v t blt-itrip i trip blanking time 100 150 --- ns v in =0 or v in =5v, v itrip =5v t itrip i trip to six switch turn-off propagation delay (see fig. 2) --- --- 1.5 s i c =5a, v + =300v d t internal dead time injected by driver 220 290 360 ns v in =0 or v in =5v m t matching propagation delay time (on & off) all channels --- 40 75 ns external dead time> 400ns 1.17 1.7 2.19 t c = 25c 1 1.5 1.9 t c = 100c i c =5a, v + =300v v bias (v cc , v bs1,2,3 )=15v, t j =25oc, unless otherwise specified. driver only timing unless otherwise specified. t flt-clr post i trip to six switch turn-off clear time (see fig. 2) ms www.irf.com 5
IRAM136-1061A thermal and mechanical characteristics symbol parameter min typ max units conditions r th(j-c) thermal resistance, per igbt --- 3.8 4.6 r th(j-c) thermal resistance, per diode --- 5.8 6.9 r th(c-s) thermal resistance, c-s --- 0.1 --- cti comparative tracking index 600 --- --- v bkcurve curvature of module backside 0 80 --- m convex only l cn maximum load cycle number --- 1800 --- x1000 i out =5a rms , t c =100c t on = 2s, t off =8s inverter operating condition flat, greased surface. heatsink compound thermal conductivity 1w/mk c/w internal ntc - th ermistor characteristics parameter definition min typ max units conditions r 25 resistance 44.65 47 49.35 k t c = 25c r 125 resistance 1.27 1.41 1.56 k t c = 125c b b-constant (25-50c) 3989 4050 4111 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 --- 125 c typ. dissipation constant --- 1 --- mw/c t c = 25c input-output logic level table flt/en i trip hin1,2,3 lin1,2,3 u,v,w 1010v+ 10010 1000off 1011off 11xxoff 0xxxoff ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (20,22,23) (24,25,26) (10,6,2) ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (20,22,23) (24,25,26) (10,6,2) 6 www.irf.com
IRAM136-1061A figure 1. input/output timing diagram i trip lin1,2,3 hin1,2,3 t flt-clr 50% 50% u,v,w 50% t itrip 50% flt 50% t flt figure 2. i trip timing waveform figure 3. output enable timing diagram note 5: the shaded area indicates that both high-side and low-side switches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7
IRAM136-1061A module pin-out description pin name description 1 vb3 high side floating supply voltage 3 2 w,vs3 output 3 - high side floating supply offset voltage 3nanone 4nanone 5 vb2 high side floating supply voltage 2 6 v,vs2 output 2 - high side floating supply offset voltage 7nanone 8nanone 9 vb1 high side floating supply voltage 1 10 u,vs1 output 1 - high side floa ting supply offset voltage 11 na none 12 na none 13 v + positive bus input voltage 14 na none 15 na none 16 i trip current protection pin 17 vru low side emitter connection - phase 1 18 flt/en fault output and enable pin 19 vrv low side emitter connection - phase 2 20 hin1 logic input high side gate driver - phase 1 21 vrw low side emitter connection - phase 3 22 hin2 logic input high side gate driver - phase 2 23 hin3 logic input high side gate driver - phase 3 24 lin1 logic input low side gate driver - phase 1 25 lin2 logic input low side gate driver - phase 2 26 lin3 logic input low side gate driver - phase 3 27 v th temperature feedback 28 v cc +15v main supply 29 v ss negative main supply 8 www.irf.com
IRAM136-1061A typical application connection IRAM136-1061A 29 1 IRAM136-1061A 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling between vcc-vss and vb1,2,3-vs1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dt04-4, application note an-1044 or figure 11. bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the vcc. (see maximum ratings table on page 3). 4. after approx. 2ms the fault is reset. (see dynamic characteristics table on page 5). 5. pwm generator must be disabled within fault duration to guarantee shutdown of the system, overcurrent condition must be cleared bef ore resuming operation. www.irf.com 9
IRAM136-1061A 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10121416182 pwm sw itching fre que ncy - k hz maximum output phase rms current - a 0 t c = 80o c t c = 90o c t c = 100o c figure 4. maximum sinusoidal phase current vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 0 1 2 3 4 5 6 7 1 10 100 modulation frequency - hz maximum output phase rms current - a f pwm = 12khz f pwm = 16khz f pwm = 20khz figure 5. maximum sinusoidal phase current vs. modulation frequency sinusoidal modulation, v + =400v, t j =150c, t c =100c, mi=0.8, pf=0.6 10 www.irf.com
IRAM136-1061A 0 20 40 60 80 100 0 2 4 6 8 10121416182 pwm sw itching frequency - khz total power loss- w 0 i out = 6a i out = 5a i out = 4a figure 6. total power losses vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 0 20 40 60 80 100 120 012345678 output phase current - a rms total power loss - w f pwm = 20khz f pwm = 16khz f pwm = 12khz figure 7. total power losses vs. output phase current sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz www.irf.com 11
IRAM136-1061A 40 60 80 100 120 140 160 012345678 output phase current - a rms max allowable case temperature - oc f pwm = 12khz f pwm = 16khz f pwm = 20khz figure 8. maximum allowable case temperature vs. output rms current per phase sinusoidal modulation, v + =400v, t j =150c, mi=0.8, pf=0.6, fmod=50hz 90 100 110 120 130 140 150 160 65 70 75 80 85 90 95 100 105 110 115 internal therm istor tem perature equivalent read out - c igbt junction temperature - c t j avg = 1.28 x t therm + 7.57 figure 9. estimated maximum igbt junction temperature vs. thermistor temperature sinusoidal modulation, v+=400v, iphase=5arms, fsw=16khz, fmod=50hz, mi=0.8, pf=0.6 12 www.irf.com
IRAM136-1061A 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 thermistor temperature - c thermistor pin read-out voltage - v t therm r therm t therm r therm t therm r therm c k c k c k -40 1747 25 47.00 90 3.972 -35 1245 30 37.64 95 3.388 -30 898.5 35 30.33 100 2.902 -25 655.8 40 24.59 105 2.494 -20 484.0 45 20.05 110 2.150 -15 360.9 50 16.43 115 1.860 -10 271.7 55 13.54 120 1.615 -5 206.5 60 11.21 125 1.406 0 158.2 65 9.328 130 1.228 5 122.3 70 7.798 135 1.076 10 95.23 75 6.544 140 0.9447 15 74.73 80 5.518 145 0.8321 20 59.07 85 4.674 150 0.7349 max avg. min figure 10. thermistor readout vs. temperature (4.7kohm pull-up resistor, 5v) and normal thermistor resistance values vs. temperature table. 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 5 10 15 20 pwm frequency - khz recommended bootstrap capacitor - f 10 f 3.3 f 2.2 f 6.8f 1.5 f 4.7 f figure 11. recommended bootstrap capacitor value vs. switching frequency www.irf.com 13
IRAM136-1061A figure 12. switching parameter definitions figure 12a. input to output propagation turn-on delay time. figure 12b. input to output propagation turn-off delay time. figure 12c. diode reverse recovery. 14 www.irf.com
IRAM136-1061A ho lo u,v,w ic driver lin1,2,3 hin1,2,3 v + i n i o figure ct1. switching loss circuit ho lo u,v,w ic driver lin1,2,3 hin1,2,3 i o v + i n i o figure ct2. s.c.soa circuit ho lo u,v,w ic driver hin1,2,3 i o lin1,2,3 v + i n i o figure ct3. r.b.soa circuit www.irf.com 15
IRAM136-1061A package outline IRAM136-1061A missing pin : 3,4,7,8,11,12,14,15 note2 note3 IRAM136-1061A p 9df00 note4 note5 note1: unit tolerance is +0.5mm, unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in this drawing differs from font shown on module. note4: lot code marking. characters font in this drawing differs from font shown on module. note5: "p" character denotes lead free. characters font in this drawing differs from font shown on module. dimensions in mm for mounting instruction see an-1049 16 www.irf.com
IRAM136-1061A package outline IRAM136-1061A2 missing pin : 3,4,7,8,11,12,14,15 note2 note3 iram 136-1061 a 2 p 9df00 note4 note5 note1: unit tolerance is +0.5mm, unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in this drawing differs from font shown on module. note4: lot code marking. characters font in this drawing differs from font shown on module. note5: "p" character denotes lead free. characters font in this drawing differs from font shown on module. dimensions in mm for mounting instruction see an-1049 data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 2011-03-17 www.irf.com 17

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